For the first time , we obtain a ( 002 ) orientated high quality zno thin films with the full width at half maximum ( fwhm ) of 0 . 2o located at 34 . 42o at a low temperature of 180 首次報(bào)道了用這種方法在襯底溫度為180oc條件下制備了( 0002 )擇優(yōu)取向,其x -射線衍射峰的半峰寬為0 . 2度的高質(zhì)量氧化鋅薄膜。
The relationships between the substrate temperature and the properties of zno films were studied in detail , we obtained a ( 002 ) orientated high quality zno thin films with the full width at half maximum ( fwhm ) of 0 用這種方法在襯底溫度為180條件下制備了( 0002 )擇優(yōu)取向, x -射線衍射峰的半高寬為0 . 2度的高質(zhì)量氧化鋅薄膜。
When the time of heat preservation prolonged , the intensity of most orientation of perovskite phase became stronger , and the full width at half maximum ( fwhm ) decreased . when the time of heat preservation was 80 seconds , the intensity of ( 100 ) and ( 110 ) orientation began to decrease 循環(huán)次數(shù)從1次增加到3次, plt薄膜的( 100 )和( 200 )峰的衍射強(qiáng)度逐漸增強(qiáng),薄膜的結(jié)晶性提高,鐵電性能逐漸增強(qiáng),循環(huán)4次濺射后,薄膜的結(jié)晶性和鐵電性開始下降。
( 2 ) several samples of different structure parameters are grown by low - pressure metal - organic chemical vapor deposition ( lp - mocvd ) . it is found that pl peak intensity , full width at half maximum ( fwhm ) and light output intensity are greatly dependent on number of wells . ratio of well / barrier width nearly has no effect on pl peak intensity and fwhm , but has little relation to light output intensity 通過分析pls ,可以及時(shí)獲取材料生長(zhǎng)和結(jié)構(gòu)設(shè)計(jì)的數(shù)據(jù),對(duì)質(zhì)量控制有重要的指導(dǎo)意義; ( 2 )對(duì)不同結(jié)構(gòu)的gainp algainp多量子阱樣品進(jìn)行了光致發(fā)光及出光強(qiáng)度的測(cè)量,發(fā)現(xiàn)mqw的周期數(shù)目n對(duì)pl峰強(qiáng)度、半峰寬和出光強(qiáng)度的影響最大;阱壘寬厚度比a對(duì)pl峰強(qiáng)度和半峰寬的影響較小,但對(duì)發(fā)光強(qiáng)度的影響較大。